• Part: RD01MUS2B
  • Description: Silicon MOSFET Power Transistor
  • Category: MOSFET
  • Manufacturer: Mitsubishi Electric
  • Size: 3.81 MB
RD01MUS2B Datasheet (PDF) Download
Mitsubishi Electric
RD01MUS2B

Key Features

  • High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70%Typ
  • 4+/-0.07 0.5+/-0.07 0.4+/-0.07 TYPE NAME
  • 8 MIN 2.5+/-0.1
  • 4+/-0.1 1.6+/-0.1 LOT No. 1 0. φ
  • 5+/-0.1 1 2
  • 5+/-0.1 3
  • 5+/-0.1
  • 4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm @Vdd=7.2V,f=527MHz
  • Integrated gate protection diode APPLICATION For output stage of high power amplifiers in VHF/UHF Band mobile radio sets. RoHS COMPLIANCE RD01MUS2B-101,T113 is a RoHS compliant products.
  • 1 MAX