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RD01MUS2B - Silicon MOSFET Power Transistor

Product Overview

Mitsubishi Electric Semiconductor

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RD01MUS2B Silicon MOSFET Power Transistor by Mitsubishi Electric Semiconductor - Datasheet Preview — Datasheet preview – RD01MUS2B

Datasheet Details

Part number	RD01MUS2B
Manufacturer	Mitsubishi Electric Semiconductor
File Size	3.81 MB
Description	Silicon MOSFET Power Transistor
Datasheet	RD01MUS2B Datasheet
Additional preview pages of the RD01MUS2B datasheet.

Product details

Description

RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

Features

High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70%Typ 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 TYPE NAME 0.8 MIN 2.5+/-0.1 4.4+/-0.1 1.6+/-0.1 LOT No. 1 0. φ 1.5+/-0.1 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm @Vdd=7.2V,f=527MHz.
Integrated gate protection diode.

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Published: Nov 5, 2012 |