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RD01MUS2B Datasheet Silicon MOSFET Power Transistor

Manufacturer: Mitsubishi Electric

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General Description

RD01MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

This device has an internal monolithic zener diode from gate to source for ESD protection.

Overview

< Silicon RF Power MOS FET (Discrete) > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE.

Key Features

  • High power gain and High Efficiency. Pout 1.6W Typ, Gp 15dBTyp, 70%Typ 0.4+/-0.07 0.5+/-0.07 0.4+/-0.07 TYPE NAME 0.8 MIN 2.5+/-0.1 4.4+/-0.1 1.6+/-0.1 LOT No. 1 0. φ 1.5+/-0.1 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm @Vdd=7.2V,f=527MHz.
  • Integrated gate protection diode.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Mitsubishi Electric Logo RD01MUS2 Silicon MOSFET Power Transistor Mitsubishi Electric

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