RD02MUS1 transistor equivalent, silicon mosfet power transistor.
High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High Efficiency:65%typ.(175MHz) High Efficiency:65%typ.(520MHz)
2
3
(0.25)
INDEX MARK (Gate)
0.2+/-0.05
F.
OUTLINE
DRAWING
4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
6.0+/-0.15
1
4.9+/-0.15 1.0+/-0.05
FEATURES
High power gain: Pout.
RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.
OUTLINE
DRAWING
4.6+/-0.05 3.3+/-0.05 0.8+/-0.05
6.0+/-0.15
1
4.9+/-0.15 1.0+/-0.05
FEATURES
High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,.
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