RD02MUS1 Datasheet | Mitsubishi Electric

.. MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 0.2+/-0.05 (0.22) (0.22) (0.25) RoHS pliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DESCRIPTION RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 6.0+/-0.15 4.9+/-0.15 1.0+/-0.05 Features High power gain: Pout>2W, Gp>16dB @Vdd=7.2V,f=175MHz,520MHz High Efficiency:65%typ.(175MHz) High Efficiency:65%typ.(520MHz) (0.25) INDEX MARK (Gate) 0.2+/-0.05 For output stage of high power amplifiers In VHF/UHF band mobile radio sets. 0.9+/-0.1 APPLIC...