NCEP60T15G mosfet equivalent, n-channel super trench power mosfet.
* VDS =60V,ID =150A RDS(ON) < 3.3mΩ @ VGS=10V (Typ:2.8mΩ)
* Excellent gate charge x RDS(on) product
* Very low on-resistance RDS(on)
* 150 °C operating te.
The NCEP60T15G uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) an.
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