NCEP60T20A Datasheet (NCE Power Semiconductor) - N-Channel Super Trench Power MOSFET

NCEP60T20A, N-Channel Super Trench Power MOSFET

The NCEP60T20A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching

NCEP60T20A Features

* VDS =60V,ID =200A RDS(ON)=1.8mΩ (typical) @ VGS=10V RDS(ON)=2.1mΩ (typical) @ VGS=4.5V Schematic diagram

* Excellent gate charge x RDS(on) product

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Marking and pin ass