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3SK253 - RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD

Features

  • Low VDD Use.
  • Driving Battery : (VDS = 3.5 V) NF = 1.8 dB TYP. (f = 900 MHz) GPS = 18.0 dB TYP. (f = 900 MHz) Embossed Type Taping 2.9±0.2 (1.8).

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Datasheet Details

Part number 3SK253
Manufacturer NEC
File Size 52.57 KB
Description RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK253 RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low VDD Use • Driving Battery : (VDS = 3.5 V) NF = 1.8 dB TYP. (f = 900 MHz) GPS = 18.0 dB TYP. (f = 900 MHz) Embossed Type Taping 2.9±0.2 (1.8) PACKAGE DIMENSIONS (Unit: mm) 2.8 +0.2 –0.3 1.5 +0.2 –0.1 2 3 0.4 +0.1 – 0.05 4 0.4 +0.1 – 0.05 0.95 • Low Noise Figure : • High Power Gain : • Suitable for use as RF amplifier in UHF TV tuner.
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