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2N6052 - Silicon PNP Transistor

Description

The 2N6052 is a silicon PNP Darlington transistor in a TO 3 type case designed for general purpose amplifier and low

frequency switching applications.

Features

  • D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector.
  • Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors Absolute Maximum Ratings: Collector.
  • Emitter Voltage, VCEO.
  • . . . 100V Collector.
  • Base Voltage, VCB.

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Datasheet Details

Part number 2N6052
Manufacturer NTE
File Size 65.35 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2N6052 Datasheet
Additional preview pages of the 2N6052 datasheet.

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Full PDF Text Transcription

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2N6052 Silicon PNP Transistors Darlington Power Amplifier TO−3 Type Package Description: The 2N6052 is a silicon PNP Darlington transistor in a TO−3 type case designed for general−purpose amplifier and low−frequency switching applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built−In Base−Emitter Shunt Resistors Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter−Base Voltage, VEB . . . . . . . . . .
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