D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Monolithic Construction with Built−In Base−Emitte.

Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V Mi.

The 2N6052 is a silicon PNP Darlington transistor in a TO−3 type case designed for general−purpose amplifier and low−frequency switching applications. Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 5A D Collector−Emitter Sustaining Voltage.

2N6050

2N6051

2N6053

2N6054

2N6055

2N6056

2N6057

2N6058

2N6059

2N60

2N60-C

2N60-CBS

2N60-E

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