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2N6123 Datasheet, NTE

2N6123 Datasheet, NTE

2N6123

datasheet Download (Size : 63.50KB)

2N6123 Datasheet

2N6123 transistor equivalent, silicon npn transistor.

2N6123

datasheet Download (Size : 63.50KB)

2N6123 Datasheet

Features and benefits

D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Collector−Emitter Saturation Voltage: VCE(sat) = 600mV Max @ IC = 1.5A, IB = 150mA Absolute Maximum Rating.

Application

Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Collector−Emitter Saturation Voltage: VCE(sat).

Description

The 2N6123 is a silicon NPN transistor in a TO−220 type package designed for use in power amplifier and switching circuit applications. Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V Min D Collector−Emitter Saturation Voltage: VC.

Image gallery

2N6123 Page 1 2N6123 Page 2

TAGS

2N6123
Silicon
NPN
Transistor
NTE

Manufacturer


NTE

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