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A5G19H605W19N Datasheet, NXP

A5G19H605W19N Datasheet, NXP

A5G19H605W19N

datasheet Download (Size : 485.05KB)

A5G19H605W19N Datasheet

A5G19H605W19N transistor

airfast rf power gan transistor.

airfast rf power gan transistor.

A5G19H605W19N

datasheet Download (Size : 485.05KB)

A5G19H605W19N Datasheet

A5G19H605W19N Features and benefits

A5G19H605W19N Features and benefits


* High terminal impedances for optimal broadband performance
* Advanced high performance in-package Doherty
* Improved linearized error vector magnitude with .

A5G19H605W19N Application

A5G19H605W19N Application

requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is ch.

A5G19H605W19N Description

A5G19H605W19N Description

This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is characterized and performa.

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TAGS

A5G19H605W19N
Airfast
Power
GaN
Transistor
NXP

Manufacturer


NXP (https://www.nxp.com/)

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