A5G19H605W19N - Airfast RF Power GaN Transistor

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NXP

A5G19H605W19N Airfast RF Power GaN Transistor by NXP - Datasheet Preview — Datasheet preview – A5G19H605W19N

Datasheet Details

Part number	A5G19H605W19N
Manufacturer	NXP
File Size	485.05 KB
Description	Airfast RF Power GaN Transistor
Datasheet	A5G19H605W19N Datasheet
Additional preview pages of the A5G19H605W19N datasheet.

Product details

Description

This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz.

Features

High terminal impedances for optimal broadband performance.
Advanced high performance in-package Doherty.
Improved linearized error vector magnitude with next generation signal.
Able to withstand extremely high output VSWR and broadband operating conditions.
Plastic package 3 Typical performance Table 1. 1900 MHz.
Typical Doherty single-carrier W-CDMA production test fixture performance VDD = 48 Vdc, IDQA = 300 mA, VGSB =.
5.0 Vdc,.

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Published: Apr 21, 2024 |