A5G19H605W19N Datasheet - NXP

Airfast RF Power GaN Transistor

A5G19H605W19N Features

* High terminal impedances for optimal broadband performance

* Advanced high performance in-package Doherty

* Improved linearized error vector magnitude with next generation signal

* Able to withstand extremely high output VSWR and broadband operating conditions

A5G19H605W19N General Description

This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz. This part is characterized and performance is guaranteed for applications operating in th.

A5G19H605W19N Datasheet (485.05 KB)