Datasheet Details
| Part number | A5G19H605W19N |
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| Manufacturer | NXP Semiconductors |
| File Size | 485.05 KB |
| Description | Airfast RF Power GaN Transistor |
| Datasheet |
 A5G19H605W19N Datasheet
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General Description
This 85 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1930 to 1995 MHz.
Key Features
- High terminal impedances for optimal broadband performance.
- Advanced high performance in-package Doherty.
- Improved linearized error vector magnitude with next generation signal.
- Able to withstand extremely high output VSWR and broadband operating conditions.
- Plastic package 3 Typical performance Table 1. 1900 MHz.
- Typical Doherty single-carrier W-CDMA production test fixture performance VDD = 48 Vdc, IDQA = 300 mA, VGSB =.
- 5.0 Vdc,.