* Characterized for Operation from 136 to 941 MHz
* Unmatched Input and Output Allowing Wide Frequency Range Utilization
* Integrated ESD Protection
* Integrated Stability Enhancements
* Wideband
* Full Power Across the Band
* Exceptional Thermal Performance
* Ext
AFT09MS007NT1 Datasheet (1.38 MB)
AFT09MS007NT1
1.38 MB
Rf power ldmos transistor.
Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N Channel Enhancement Mode Lateral MOSFET Designed .
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