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NXP Semiconductors Electronic Components Datasheet

AFT09MS007NT1 Datasheet

RF Power LDMOS Transistor

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Freescale Semiconductor
Technical Data
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from
136 to 941 MHz. The high gain, ruggedness and wideband performance of this
device makes it ideal for large--signal, common--source amplifier applications
in handheld radio equipment.
Narrowband Performance (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW)
Frequency
(MHz)
Gps
D
Pout
(dB)
(%)
(W)
870 (1)
15.2
71.0
7.3
Wideband Performance (7.5 Vdc, TA = 25C, CW)
Frequency
(MHz)
Pin
Gps
D
Pout
(W)
(dB)
(%)
(W)
136–174
350–470 (2,5)
450–520 (3,5)
760–860 (4,5)
0.25
14.6
69.0
7.2
0.20
15.6
60.9
7.3
0.22
15.4
56.0
7.5
0.23
15.1
48.1
7.5
Load Mismatch/Ruggedness
Frequency Signal
(MHz)
Type
VSWR
Pin
Test
(W)
Voltage Result
870 (1)
CW > 65:1 at all
0.4
Phase Angles (3 dB Overdrive)
10.8 No Device
Degradation
1. Measured in 870 MHz narrowband test circuit.
2. Measured in 350–470 MHz UHF broadband reference circuit.
3. Measured in 450–520 MHz UHF broadband reference circuit.
4. Measured in 760–860 MHz UHF broadband reference circuit.
5. The values shown are the minimum measured performance numbers across the
indicated frequency range.
Features
Characterized for Operation from 136 to 941 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band
Exceptional Thermal Performance
Extreme Ruggedness
High Linearity for: TETRA, SSB
In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel.
Typical Applications
Output Stage VHF Band Handheld Radio
Output Stage UHF Band Handheld Radio
Output Stage for 700–800 MHz Handheld Radio
Document Number: AFT09MS007N
Rev. 1, 4/2014
AFT09MS007NT1
136–941 MHz, 7 W, 7.5 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
PLD--1.5W
Gate
Drain
Note: The center pad on the backside of
the package is the source terminal
for the transistor.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2013–2014. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS007NT1
1


NXP Semiconductors Electronic Components Datasheet

AFT09MS007NT1 Datasheet

RF Power LDMOS Transistor

No Preview Available !

Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature (1,2)
Total Device Dissipation @ TC = 25C
Derate above 25C
Symbol
VDSS
VGS
VDD
Tstg
TC
TJ
PD
Value
–0.5, +30
–6.0, +12
12.5, +0
–65 to +150
–40 to +150
–40 to +150
114
0.91
Unit
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 74C, 7 W CW, 7.5 Vdc, IDQ = 100 mA, 870 MHz
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Symbol
RJC
Value (2,3)
1.1
Unit
C/W
Class
2, passes 2500 V
B, passes 200 V
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 30 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 7.5 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10
Adc
IDSS
2
Adc
IGSS
1
nAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 110 Adc)
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1.1 Adc)
Forward Transconductance
(VDS = 7.5 Vdc, ID = 3 Adc)
VGS(th)
1.6
2.1
2.6
Vdc
VDS(on)
0.12
Vdc
gfs
9.8
S
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 7.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
2.7
pF
Output Capacitance
(VDS = 7.5 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
56
pF
Input Capacitance
(VDS = 7.5 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss
107
pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
AFT09MS007NT1
RF Device Data
2
Freescale Semiconductor, Inc.


Part Number AFT09MS007NT1
Description RF Power LDMOS Transistor
Maker NXP
Total Page 3 Pages
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