LLE18150X transistor equivalent, npn silicon planar epitaxial microwave power transistor.
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficien.
between 1.7 GHz and 2.0 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a FO-229 glued cap m.
NPN silicon planar epitaxial microwave power transistor in a FO-229 glued cap metal ceramic flange package, with emitter connected to flange. WARNING Product and environmental safety - toxic materials
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handbook, 4 columns
LLE18150X
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