Full PDF Text Transcription for 2N7000 (Reference)
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N-Channel Enhancement Mode Field Effect Transistor 2N7000, 2N7002, NDS7002A Description These N−channel enhancement mode field effect transistors are produced using onsem...
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nel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features High Density Cell Design for Low RDS(on) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability ESD Protection Level: HBM > 100 V, CDM > 2
2N7000 Datasheet
