Datasheet Summary
MOSFET
- P-Channel POWERTRENCH)
-20 V, -6 A, 37 mW
General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It Features a MOSFET with low on- state resistance.
The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Features
- Max rDS(on) = 37 mW at VGS =
- 4.5 V, ID =
- 5 A
- Max rDS(on) = 50 mW at VGS =
- 2.5 V, ID =
- 4 A
- Max rDS(on) = 65 mW at VGS =
- 1.8 V, ID =
- 3 A
- Max rDS(on) = 100 mW at VGS =
- 1.5 V, ID =
- 2 A
- Low Profile: 0.55 mm Maximum in the New Package MicroFET
1.6x1.6...
