FDS8876 - N-Channel MOSFET

ON Semiconductor

FDS8876 Datasheet Preview — Preview of FDS8876 PDF

Datasheet Details

Part number	FDS8876
Manufacturer	ON Semiconductor ↗
File Size	353.41 KB
Description	N-Channel MOSFET
Datasheet	FDS8876-ONSemiconductor.pdf

FDS8876 Product details

Description

This N Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Features

rDS(on) = 8.2 mW, VGS = 10 V, ID = 12.5 A.
rDS(on) = 10.2 mW, VGS = 4.5 V, ID = 11.4 A.
High Performance Trench Technology for Extremely Low rDS(on).
Low Gate Charge.
High Power and Current Handling Capability.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Dec 25, 2023 |