FDS8876 mosfet equivalent, n-channel mosfet.
* rDS(on) = 8.2 mW, VGS = 10 V, ID = 12.5 A
* rDS(on) = 10.2 mW, VGS = 4.5 V, ID = 11.4 A
* High Performance Trench Technology for Extremely Low rDS(on)
*.
* DC/DC Converters
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS.
This N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching s.
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