FDS8876 Overview
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Key Features
- rDS(on) = 8.2 mW, VGS = 10 V, ID = 12.5 A
- rDS(on) = 10.2 mW, VGS = 4.5 V, ID = 11.4 A
- High Performance Trench Technology for Extremely Low rDS(on)
- Low Gate Charge
- High Power and Current Handling Capability
- These Devices are Pb-Free and are RoHS Compliant
