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FDS8876 - N-Channel MOSFET

Description

This N

improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Features

  • rDS(on) = 8.2 mW, VGS = 10 V, ID = 12.5 A.
  • rDS(on) = 10.2 mW, VGS = 4.5 V, ID = 11.4 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • Low Gate Charge.
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FDS8876
Manufacturer onsemi
File Size 353.41 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS8876 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, POWERTRENCH) 30 V, 12.5 A, 8.2 mW FDS8876, FDS8876-F40 General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Features • rDS(on) = 8.2 mW, VGS = 10 V, ID = 12.5 A • rDS(on) = 10.2 mW, VGS = 4.5 V, ID = 11.
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