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UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
63 A, 600 V
HGTG30N60C3D
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti−parallel with the IGBT is the development type TA49053.
This IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential
Formerly Developmental Type TA49014.
HGTG30N60C3D Datasheet
