HGTG30N60C3D Datasheet | onsemi

UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 63 A, 600 V The HGTG30N60C3D is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor. The much lower on- state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti- parallel with the IGBT is the development type TA49053. This IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential Formerly...