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HGTG30N60C3D Datasheet, ON Semiconductor

HGTG30N60C3D igbt equivalent, n-channel igbt.

HGTG30N60C3D Avg. rating / M : 1.0 rating-13

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HGTG30N60C3D Datasheet

Features and benefits

of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−st.

Application

operating at moderate frequencies where low conduction losses are essential Formerly Developmental Type TA49014. Feature.

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