NTH4L067N65S3H mosfet equivalent, n-channel mosfet.
* 700 V @ TJ = 150°C
* Typ. RDS(on) = 55 mW
* Ultra Low Gate Charge (Typ. Qg = 80 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 691 pF)
* .
* Telecom / Server Power Supplies
* Industrial Power Supplies
* UPS / Solar
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VDSS.
SUPERFET III MOSFET is onsemi’s brand−new high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize.
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