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NTH4L067N65S3H Datasheet

N-Channel MOSFET

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MOSFET - Power,
N-Channel, SUPERFET) III,
FAST
650 V, 67 mW, 40 A
NTH4L067N65S3H
Description
SUPERFET III MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET FAST series is very
suitable for the various power systems for miniaturization and higher
efficiency.
Features
700 V @ TJ = 150°C
Typ. RDS(on) = 55 mW
Ultra Low Gate Charge (Typ. Qg = 80 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 691 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Telecom / Server Power Supplies
Industrial Power Supplies
UPS / Solar
www.onsemi.com
VDSS
650 V
RDS(ON) MAX
67 mW @ 10 V
ID MAX
40 A
D
G
S1: Driver Source
S1
S2 S2: Power Source
POWER MOSFET
D
S2S1G
TO2474LD
CASE 340CJ
MARKING DIAGRAM
T067N
65S3H
AYWWZZ
© Semiconductor Components Industries, LLC, 2020
March, 2021 Rev. 1
T067N65S3H
A
YWW
ZZ
= Specific Device Code
= Assembly Plant Code
= Data Code (Year & Week)
= Assembly Lot Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
NTH4L067N65S3H/D


  ON Semiconductor Electronic Components Datasheet  

NTH4L067N65S3H Datasheet

N-Channel MOSFET

No Preview Available !

NTH4L067N65S3H
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
650
V
±30
V
±30
ID
Drain Current
Continuous (TC = 25°C)
40
Continuous (TC = 100°C)
25
IDM
Drain Current
Pulsed (Note 1)
112
EAS
Single Pulsed Avalanche Energy (Note 2)
422
IAS
Avalanche Current (Note 2)
6.5
EAR
Repetitive Avalanche Energy (Note 1)
2.66
dv/dt
MOSFET dv/dt
100
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
266
W
2.13
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 seconds
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 6.5 A, RG = 25 W, starting TJ = 25°C.
3. ISD 20 A, di/dt 200 A/ms, VDD 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
0.47
40
Unit
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
NTH4L067N65S3H
T067N65S3H
TO247 A04
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 Units
www.onsemi.com
2


Part Number NTH4L067N65S3H
Description N-Channel MOSFET
Maker ON Semiconductor
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