NTH4L067N65S3H Datasheet - ON Semiconductor

N-Channel MOSFET

NTH4L067N65S3H Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 55 mW

* Ultra Low Gate Charge (Typ. Qg = 80 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 691 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

NTH4L067N65S3H General Description

SUPERFET III MOSFET is onsemi’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides.

NTH4L067N65S3H Datasheet (291.45 KB)