NE55410GR - N-CHANNEL SILICON POWER LDMOS FET

Product Overview

Renesas

Datasheet Details

Part number	NE55410GR
Manufacturer	Renesas
File Size	231.18 KB
Description	N-CHANNEL SILICON POWER LDMOS FET
Datasheet	NE55410GR Datasheet
Additional preview pages of the NE55410GR datasheet.

Product details

Description

The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s.

Features

Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package.
Over 25 dB gain available by connecting two FET’s in series : GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : GL (Q2) = 11.0 dB TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz).
High 1 dB compression output power : PO (1 dB) (Q1) = 35.4 dBm TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : PO (1 dB) (Q2) = 40.4 dBm TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f =.

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Published: Apr 1, 2016 |