NE55410GR Datasheet - Renesas

N-CHANNEL SILICON POWER LDMOS FET

NE55410GR Features

* Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package

* Over 25 dB gain available by connecting two FET’s in series : GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : GL (Q2) = 11.0 dB TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz

NE55410GR General Description

The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral.

NE55410GR Datasheet (231.18 KB)

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NE55410GR

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Renesas ↗

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231.18 KB

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N-channel silicon power ldmos fet.
DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPT.

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NE55410GR N-CHANNEL SILICON POWER LDMOS FET Renesas

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NE55410GR Features

NE55410GR General Description

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