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Renesas Electronics Components Datasheet

NE55410GR Datasheet

N-CHANNEL SILICON POWER LDMOS FET

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DATA SHEET
LDMOS FIELD EFFECT TRANSISTOR
NE55410GR
N-CHANNEL SILICON POWER LDMOS FET
FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
DESCRIPTION
The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such
as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different
FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride
surface passivation and quadruple layer aluminum silicon metalization offer a high degree of reliability.
<R>
FEATURES
• Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package
• Over 25 dB gain available by connecting two FET’s in series
: GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz)
: GL (Q2) = 11.0 dB TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)
• High 1 dB compression output power : PO (1 dB) (Q1) = 35.4 dBm TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz)
: PO (1 dB) (Q2) = 40.4 dBm TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)
• High drain efficiency
: ηd (Q1) = 52% TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz)
: ηd (Q2) = 46% TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz)
• Low intermodulation distortion
: IM3 (Q1) = 40 dBc TYP. (VDS = 28 V, IDset (Q1+Q2) = 120 mA,
f = 2 132.5/2 147.5 MHz, Pout = 33 dBm (2 tones) )
• Single Supply (VDS : 3 V < VDS 32 V)
• Excellent Thermal Stability
• Surface mount type and Super low cost plastic package : 16-pin plastic HTSSOP
• Integrated ESD protection
• Excellent stability against HCI (Hot Carrier Injection)
APPLICATION
<R> • Digital cellular base station PA : W-CDMA/GSM/D-AMPS/N-CDMA/PCS etc.
• UHF-band TV transmitter PA
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10542EJ03V0DS (3rd edition)
Date Published January 2007 NS CP(N)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2004, 2007


Renesas Electronics Components Datasheet

NE55410GR Datasheet

N-CHANNEL SILICON POWER LDMOS FET

No Preview Available !

NE55410GR
ORDERING INFORMATION
Part Number
NE55410GR
Order Number
NE55410GR-T3-AZ
Package
16-pin plastic HTSSOP
(Pb-Free) Note
Marking
Supplying Form
55410
Embossed tape 12 mm wide
Pin 1 and 8 indicates pull-out direction of tape
Qty 1 kpcs/reel
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE55410GR
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
S
9 S Q1
10
11 S
12
S
13 S Q2
14
15
16 S
S
S8
7
S6
5
4
3
2
S1
S
Pin No.
Pin Name
Pin No.
Pin Name
1 Source 9 Source
2 Drain (Q2) 10 Gate (Q1)
3
Drain (Q2)
11
Source
4 Drain (Q2) 12 Drain (Q1)
5
Drain (Q2)
13
Source
6
Source
14 Gate (Q2)
7 Gate (Q1) 15 Gate (Q2)
8 Source 16 Source
Remark All the terminals of a Q2 connected to a
circuit. Backside : Source (S)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Drain Current (Q1)
ID (Q1)
Drain Current (Q2)
ID (Q2)
Total Device Dissipation (Tcase = 25°C) Ptot
Input Power (Q1)
Pin (Q1) f = 2.14 GHz, VDS = 28 V
Input Power (Q2)
Pin (Q2) f = 2.14 GHz, VDS = 28 V
Channel Temperature
Tch
Storage Temperature
Tstg
Ratings
65
±7
0.25
1.0
40
0.3
1.5
150
65 to +150
Unit
V
V
A
A
W
W
W
°C
°C
2 Data Sheet PU10542EJ03V0DS


Part Number NE55410GR
Description N-CHANNEL SILICON POWER LDMOS FET
Maker Renesas
Total Page 13 Pages
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