NE55410GR fet equivalent, n-channel silicon power ldmos fet.
* Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package
* Over 25 dB gain available by connecting two FET’s in series
: GL (Q1) = 13.5 dB TYP..
The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different FET's on one die manufactured.
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