RQJ0306FQDQA Description
RQJ0306FQDQA Silicon P Channel MOS FET Power Switching.
RQJ0306FQDQA Key Features
- Low gate drive VDSS : -30 V and 2.5 V gate drive
- Low drive current
- High speed switching
- Small traditional package (MPAK)
- Part: RQJ0306FQDQA
- Manufacturer: Renesas (official site)
- Size: 132.04 KB
