SW7N60H Datasheet, SEMIPOWER

TO-220F
* High ruggedness
* RDS(ON) (Max 1.32Ω)@VGS=10V
* Gate Charge (Typical 28nC)
* Improved dv/dt Capability
* 100% Avalanche Tested 12 3 Gene.

1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially .