SW7N65DA Datasheet - Samwin

SW7N65DA N-channel MOSFET

1. Gate 2. Drain 3. Source 3 This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Co.

SW7N65DA Features

* High ruggedness

* Low RDS(ON) (Typ 1.4Ω)@VGS=10V

* Low Gate Charge (Typ 25nC)

* Improved dv/dt Capability

* 100% Avalanche Tested

* Application: LED , Charge, PC Power TO-251N TO-262N TO-252 1 23 1 23 1 23 BVDSS : 650V ID : 7A RDS(ON) : 1.4Ω 2 1 General Descript

SW7N65DA Datasheet (918.16 KB)