SW7N65K
Samwin
1.09MB
N-channel mosfet. 1. Gate 2. Drain 3. Source This power MOSFET is produced with super junction advanced technology of SAMWIN. This technology enable
TAGS
📁 Related Datasheet
SW7N65 - N-channel MOSFET
(SAMWIN)
SAMWIN
TO-220F TO-220
SW7N65
N-channel MOSFET
BVDSS : 650V ID : 7.0A RDS(ON) : 1.32ohm
1 2 1 3 2 2 3 1 3
Features
■ High ruggedness ■ RDS(ON) (Max 1.
SW7N65B - N-channel TO-220F MOSFET
(SEMIPOWER)
SAMWIN
Features
■ High ruggedness ■ RDS(ON) (Max 1.4 Ω)@VGS=10V ■ Gate Charge (Typical 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-22.
SW7N65DA - N-channel MOSFET
(Samwin)
SW7N65DA
N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET
Features
High ruggedness Low RDS(ON) (Typ 1.4Ω)@VGS=10V Low Gate Charge (Typ 25.
SW7N65K2 - N-channel MOSFET
(Samwin)
SW7N65K2
N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252 MOSFET
Features
TO-220F TO-251 TO-251N TO-252
High ruggedness
Low RDS(ON) (Typ.
SW7N60 - N-Channel MOSFET
(SAMWIN)
..
SAMWIN
Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ℃) : 600 V : 1 ohm : 7.0 A : .
SW7N60A - N-channel MOSFET
(SAMWIN)
SAMWIN
SW7N60A
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 1.3 Ω)@VGS=10V ■ Gate Charge (Typ 38nC) ■ Improved dv/dt Capability ■ 100%.
SW7N60D - N-Channel MOSFET
(SEMIPOWER)
SW7N60D
N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET
Features
TO-220F TO-220 TO-251 TO-252
High ruggedness Low RDS(ON) (Typ .
SW7N60H - MOSFET
(SEMIPOWER)
SAMWIN
SW7N60H
N-channel TO-220F MOSFET
Features
TO-220F
■ High ruggedness ■ RDS(ON) (Max 1.32Ω)@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved .
SW7N60K - MOSFET
(SEMIPOWER)
SAMWIN
SW7N60K
N-channel TO-220F/I-PAK MOSFET
Features
TO-220F
TO-251
■ High ruggedness ■ RDS(ON) (Max 0.6Ω)@VGS=10V ■ Gate Charge (Typical 21nC.
SW7N60R - MOSFET
(SEMIPOWER)
SAMWIN
SW7N60R
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max1.25Ω)@VGS=10V ■ Gate Charge (Typical 19nC) ■ Improved dv/.
