SW7N60A

N-channel MOSFET

SAMWIN

SW7N60A Features

* High ruggedness

* RDS(ON) (Max 1.3 Ω)@VGS=10V

* Gate Charge (Typ 38nC)

* Improved dv/dt Capability

* 100% Avalanche Tested TO-220F TO-220 BVDSS : 600V ID : 7.0A RDS(ON) : 1.3ohm 1 2 1 3 2 3 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produce

SW7N60A General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high ef.

SW7N60A Datasheet (838.24 KB)

SW7N60A Datasheet Preview — Preview of SW7N60A PDF

Datasheet Details

Part number:

SW7N60A

Manufacturer:

SAMWIN

File Size:

838.24 KB

Description:

N-channel mosfet.

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TAGS

SW7N60A N-channel MOSFET SAMWIN

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SW7N60A Features

SW7N60A General Description

Datasheet Details

File Size:

Description:

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