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SW7N90

N-channel MOSFET

SW7N90 Features

* High ruggedness

* RDS(ON) (Max 1.8 Ω)@VGS=10V

* Gate Charge (Typical 50nC)

* Improved dv/dt Capability

* 100% Avalanche Tested BVDSS : 900V ID : 7.0A RDS(ON) : 1.8ohm 2 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technolog

SW7N90 General Description

This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high ef.

SW7N90 Datasheet (411.25 KB)

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Preview of SW7N90 PDF

Datasheet Details

Part number:

SW7N90

Manufacturer:

SAMWIN

File Size:

411.25 KB

Description:

N-channel mosfet.

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Stock and price

part
Diotec Semiconductor AG
ER1D
DIODE STANDARD 200V 1A DO214AC
DigiKey
0 In Stock
Qty : 7500 units
Unit Price : $0.14

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SW7N90 N-channel MOSFET SAMWIN

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