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STB13NM60N - N-CHANNEL POWER MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • TAB 3 1 D²PAK TAB 3 1 DPAK Order code VDS (@Tjmax) RDS(on) max STB13NM60N STD13NM60N 650 V 0.36 Ω ID 11 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance Figure 1. Internal schematic diagram ' RU7$% .
  •  6  .

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB13NM60N, STD13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages Datasheet — production data Features TAB 3 1 D²PAK TAB 3 1 DPAK Order code VDS (@Tjmax) RDS(on) max STB13NM60N STD13NM60N 650 V 0.36 Ω ID 11 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Figure 1. Internal schematic diagram ' RU7$% *  6  Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.