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STP80N6F6 - Automotive-grade N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate

structure.

the lowest RDS(on) in all packages.

Table 1.

Key Features

  • TAB 3 2 1 TO-220 Order code STP80N6F6 VDS 60 V RDS(on) max. ID 5 mΩ (1) 80 A 1. Current limited by package.
  • Designed for automotive.

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STP80N6F6 Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data Features TAB 3 2 1 TO-220 Order code STP80N6F6 VDS 60 V RDS(on) max. ID 5 mΩ (1) 80 A 1. Current limited by package • Designed for automotive applications and AEC-Q101 qualified • Low gate charge • Very low on-resistance • High avalanche ruggedness Figure 1. Internal schematic diagram ' Ć7$% Applications • Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate *  structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6  $0Y Order code STP80N6F6 Table 1.