KM736V689 - 64Kx36-Bit Synchronous Pipelined Burst SRAM

Product Overview

Samsung Semiconductor

Datasheet Details

Part number	KM736V689
Manufacturer	Samsung Semiconductor
File Size	433.23 KB
Description	64Kx36-Bit Synchronous Pipelined Burst SRAM
Datasheet	KM736V689 Datasheet
Additional preview pages of the KM736V689 datasheet.

Product details

Description

The KM736V689/L is a 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

It is organized as 64K words of 36bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM applications; GW, BW, LBO, ZZ.

Features

Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD= 3.3V-5%/+10% Power Supple 5V Tolerant Inputs Except I/O Pins. Byte Writable Function. Global Write Enable Controls a full bus-width write. Power Down State via ZZ Signal. LBO Pin all.

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Published: Sep 30, 2005 |