KM736V689 - 64Kx36-Bit Synchronous Pipelined Burst SRAM

Samsung Semiconductor

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Datasheet Details

Part number: KM736V689
Manufacturer: Samsung Semiconductor
File Size: 433.23 KB
Datasheet: KM736V689_SamsungSemiconductor.pdf
Description: 64Kx36-Bit Synchronous Pipelined Burst SRAM

KM736V689 Product details

Description

The KM736V689/L is a 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System..

Features

Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD= 3.3V-5%/+10% Power Supple 5V Tolerant Inputs Except I/O Pins. Byte Writable Function. Global Write Enable Controls a full bus-width write. Power Down State via ZZ Signal. LBO Pin all.

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64Kx36-Bit Synchronous Pipelined Burst SRAM Samsung Semiconductor

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