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SW055R68E7T - N-channel MOSFET

Description

1.

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Features

  • N-channel Enhanced mode TO-220/TO-263 MOSFET.
  • High ruggedness.
  • Low RDS(ON) (Typ 5.6mΩ)@VGS=10V.
  • Low Gate Charge (Typ 94nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet preview – SW055R68E7T

Datasheet Details

Part number SW055R68E7T
Manufacturer Samwin
File Size 816.28 KB
Description N-channel MOSFET
Datasheet download datasheet SW055R68E7T Datasheet
Additional preview pages of the SW055R68E7T datasheet.

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Full PDF Text Transcription

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SW055R68E7T Features N-channel Enhanced mode TO-220/TO-263 MOSFET  High ruggedness  Low RDS(ON) (Typ 5.6mΩ)@VGS=10V  Low Gate Charge (Typ 94nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:Synchronous Rectification, Li Battery Protect Board, Inverter TO-220 TO-263 12 3 12 3 General Description 1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 68V ID : 110A RDS(ON) : 5.
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