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SW055R68E7T Datasheet - Samwin

N-channel MOSFET

SW055R68E7T Features

* N-channel Enhanced mode TO-220/TO-263 MOSFET

* High ruggedness

* Low RDS(ON) (Typ 5.6mΩ)@VGS=10V

* Low Gate Charge (Typ 94nC)

* Improved dv/dt Capability

* 100% Avalanche Tested

* Application:Synchronous Rectification, Li Battery Protect Board, Inverter TO-220 TO-263 12

SW055R68E7T General Description

1. Gate 2.Drain 3.Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. BVDSS : 68V ID .

SW055R68E7T Datasheet (816.28 KB)

Preview of SW055R68E7T PDF

Datasheet Details

Part number:

SW055R68E7T

Manufacturer:

Samwin

File Size:

816.28 KB

Description:

N-channel mosfet.

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SW055R68E7T N-channel MOSFET Samwin

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