n-channel mosfet.
* High ruggedness
* Low RDS(ON) (Typ 1.4Ω)@VGS=10V
* Low Gate Charge (Typ 25nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
* Application:.
1. Gate 2. Drain 3. Source
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especial.
Image gallery
TAGS
Download (Size : 918.16KB)