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SW7N65DA - N-channel MOSFET

General Description

1.

Gate 2.

Drain 3.

Key Features

  • High ruggedness.
  • Low RDS(ON) (Typ 1.4Ω)@VGS=10V.
  • Low Gate Charge (Typ 25nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW7N65DA
Manufacturer Samwin
File Size 918.16 KB
Description N-channel MOSFET
Datasheet download datasheet SW7N65DA Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SW7N65DA N-channel Enhanced mode TO-251N/TO-262N/TO-252 MOSFET Features  High ruggedness  Low RDS(ON) (Typ 1.4Ω)@VGS=10V  Low Gate Charge (Typ 25nC)  Improved dv/dt Capability  100% Avalanche Tested  Application: LED , Charge, PC Power TO-251N TO-262N TO-252 1 23 1 23 1 23 BVDSS : 650V ID : 7A RDS(ON) : 1.4Ω 2 1 General Description 1. Gate 2. Drain 3. Source 3 This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.