SW7N65DA
Features
- High ruggedness
- Low RDS(ON) (Typ 1.4Ω)@VGS=10V
- Low Gate Charge (Typ 25n C)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Application: LED , Charge, PC Power
TO-251N
TO-262N TO-252
1 23
1 23
1 23
BVDSS : 650V
: 7A
RDS(ON) : 1.4Ω
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Order Codes
Item
Sales Type
SW N 7N65DA
SW J 7N65DA
SW D 7N65DA
Marking SW7N65DA SW7N65DA SW7N65DA
Package TO-251N TO-262N TO-252
Packaging TUBE TUBE REEL
Absolute maximum ratings
Symbol
Parameter
Value TO-251N...
