Datasheet Summary
VCE = 650 V, IC = 60 A Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A6H, MGF65A6H
Data Sheet
Description
The KGF65A6H and MGF65A6H are 650 V Field Stop IGBTs. Sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction. Thus, these Field Stop IGBTs can improve the efficiency of your circuit.
Features
- Low Saturation Voltage
- High Speed Switching
- With Integrated Fast Recovery Diode
- RoHS pliant
- VCE ------------------------------------------------------ 650 V
- IC (TC = 100 °C) ----------------------------------------- 60 A
- Short Circuit Withstand Time ----------------------- 10 μs
- VCE(sat)----------------...