Datasheet4U Logo Datasheet4U.com

2SJ562 - Ultrahigh-Speed Switching Applications

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive. Package Dimensions unit:mm 2062A [2SJ562] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Gate 2 : Drain 3 : Source SANYO :.

📥 Download Datasheet

Datasheet preview – 2SJ562

Datasheet Details

Part number 2SJ562
Manufacturer Sanyo Semicon Device
File Size 147.40 KB
Description Ultrahigh-Speed Switching Applications
Datasheet download datasheet 2SJ562 Datasheet
Additional preview pages of the 2SJ562 datasheet.

📁 Similar Datasheet

  • 2SJ567 - Silicon P-Channel MOSFET (Toshiba Semiconductor)
  • 2SJ50 - P-Channel MOSFET (Hitachi Semiconductor)
  • 2SJ504 - P-Channel MOSFET (Hitachi Semiconductor)
  • 2SJ505 - P-Channel MOSFET (Hitachi Semiconductor)
  • 2SJ505L - P-Channel MOSFET (Hitachi Semiconductor)
  • 2SJ505S - P-Channel MOSFET (Hitachi Semiconductor)
  • 2SJ505S - P-Channel MOSFET (VBsemi)
  • 2SJ506 - P-Channel MOSFET (Hitachi Semiconductor)
  • 2SJ506L - P-Channel MOSFET (Hitachi Semiconductor)
  • 2SJ506S - Silicon P-Channel MOSFET (Hitachi Semiconductor)
Other Datasheets by Sanyo Semicon Device
  • 2SJ560 - Ultrahigh-Speed Switching Applications
  • 2SJ561 - Ultrahigh-Speed Switching Applications
  • 2SJ563 - Ultrahigh-Speed Switching Applications
  • 2SJ569LS - Ultrahigh-Speed Switching Applications
  • 2SJ501 - P-Channel MOSFET
  • 2SJ502 - P-Channel MOSFET
  • 2SJ503 - P-Channel MOSFET
  • 2SJ520 - P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
Ordering number:ENN6096A P-Channel Silicon MOSFET 2SJ562 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2062A [2SJ562] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Conditions Ratings –20 ±10 –2 –8 1.5 3.5 150 –55 to +150 Unit V V A A W W ˚C ˚C Mounted on a ceramic board (250mm2× 0.
Published: |