Datasheet Details
| Part number | STN442D |
|---|---|
| Manufacturer | Stanson |
| File Size | 736.94 KB |
| Description | N Channel Enhancement Mode MOSFET |
| Datasheet |
 STN442D-Stanson.pdf
|
| Part number | STN442D |
|---|---|
| Manufacturer | Stanson |
| File Size | 736.94 KB |
| Description | N Channel Enhancement Mode MOSFET |
| Datasheet |
STN442D-Stanson.pdf
|
STN442D is used trench technology to provide excellent RDS(on) and gate charge. 60V/20.0A, RDS(ON) = 24mΩ (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 31mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design PART MARKING Y: Year Code A: Proce
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