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STN442D - N-Channel Enhancement Mode MOSFET

Description

STN442D is used trench technology to provide excellent RDS(on) and gate charge.

Those devices are suitable for use as load switch or in PWM applications.

60V/20.0A, RDS(ON) = 24mΩ (Typ.) @VGS = 10V 60V/20.0A, RDS(ON) = 31mΩ @VGS = 4.5V

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Datasheet Details

Part number STN442D
Manufacturer Stanson
File Size 736.94 KB
Description N-Channel Enhancement Mode MOSFET
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STN442D N Channel Enhancement Mode MOSFET 37.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS(on) and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE � 60V/20.0A, RDS(ON) = 24mΩ (Typ.) @VGS = 10V � 60V/20.0A, RDS(ON) = 31mΩ @VGS = 4.5V � Super high density cell design for extremely low RDS(ON) � Exceptional on-resistance and maximum DC current capability � TO-252,TO-251 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. STN442D 2009. V1 STN442D N Channel Enhancement Mode MOSFET 37.
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