TSM3900D - 20V Dual N-Channel MOSFET

Taiwan Semiconductor Company

Key Features

Advance Trench Process Technology.
High Density Cell Design for Ultra Low On-resistance Block Diagram.

TSM3900D 20v dual n-channel mosfet by Taiwan Semiconductor Company - Datasheet Preview

Datasheet Details

Part number	TSM3900D
Manufacturer	Taiwan Semiconductor Company
File Size	325.40 KB
Description	20V Dual N-Channel MOSFET
Datasheet	TSM3900D Datasheet

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Full PDF Text Transcription (Reference)

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TSM3900D 20V Dual N-Channel MOSFET SOT-26 Pin Definition: 1. Gate 1 6. Drain 1 2. Source 2 5. Source 1 3. Gate 2 4. Drain 2 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 55 @ VGS = 4.5V 20 70 @ VGS = 2.5V 110 @ VGS = 1.8V Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● Load Switch ● PA Switch Ordering Information ID (A) 2.0 1.5 1.0 Part No.