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TSM4ND50 - 500V N-Channel Power MOSFET

General Description

The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • Low gate charge typical @ 12nC.
  • Low Crss typical @ 10pF.
  • Fast Switching.
  • Improved dv/dt capability.
  • ESD Protection Block Diagram Ordering Information Part No. Package TSM4ND50CH C5 TO-251 TSM4ND50CH C5G TO-251 TSM4ND50CP RO TO-252 TSM4ND50CP ROG TO-252 Note: “G” denotes for Halogen Free Packing 75pcs / Tube 75.

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Datasheet Details

Part number TSM4ND50
Manufacturer Taiwan Semiconductor Company
File Size 341.60 KB
Description 500V N-Channel Power MOSFET
Datasheet download datasheet TSM4ND50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TO-251 (IPAK) TSM4ND50 500V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 500 2.7 @ VGS =10V ID (A) 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.