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HN1D01FU Toshiba (https://www.toshiba.com/) Silicon Epitaxial Planar Type Diode

Toshiba
Description TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  HN1D01FU is composed of 2 unit of anode common.  Low forward voltage: VF (3) = 0.92 V (typ.)  Fast reverse recovery time: trr = 1.6 ns (typ.)  Small total capacitance: CT = 2.2 pF (typ.) Note1: For detail information, please contact our sales. HN1D01FU Unit: mm Abs...
Features ure/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Relia...

Datasheet PDF File HN1D01FU Datasheet 279.80KB

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