HN1D04FU Datasheet - Toshiba

HN1D04FU Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type HN1D04FU Ultra High Speed Switching Application z Low forward voltage : VF(3) = 0.90V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.) HN1D04FU Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Stora.

HN1D04FU Datasheet (231.42 KB)