TH58NYG3S0HBAI6
Overview
The TH58NYG3S0HBAI6 is a single 1.8V 8Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 4096 blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.
- Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 × 2 4352 × 8 4352 bytes (256K + 16K) bytes
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
- Mode control Serial input/output Command control
- Number of valid blocks Min 4016 blocks Max 4096 blocks
- Power supply VCC = 1.7V to 1.95V
- Access time Cell array to register 25 µs max Read Cycle Time 25 ns min (CL=30pF)
- Program/Erase time Auto Page Program 300 µs/page typ. Auto Block Erase 3.5 ms/block typ.
- Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 mA max 30 mA max 30 mA max 100 µA max
- Package P-VFBGA67-0608-0.80-001 (Weight: 0.101 g typ.)
- 8 bit ECC for each 512Byte is required. © 2013-2018 Toshiba Memory Corporation 1
