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TH58NYG4S0FBAID Datasheet - Toshiba

TH58NYG4S0FBAID 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM

The TH58NYG4S0F is a single 1.8V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks. The device has two 4328-byte static registers which allow program and read data to be transferred betwee.

TH58NYG4S0FBAID Features

* Organization x8 Memory cell array 4328 × 256K × 8 × 2 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.5K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Pag

TH58NYG4S0FBAID Datasheet (921.79 KB)

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Datasheet Details

Part number:

TH58NYG4S0FBAID

Manufacturer:

Toshiba ↗

File Size:

921.79 KB

Description:

16 gbit (2g x 8 bit) cmos nand e2prom.

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TAGS

TH58NYG4S0FBAID GBIT BIT CMOS NAND E2PROM Toshiba

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