TH58NYG4S0FBAID Datasheet (Toshiba) - 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM

TH58NYG4S0FBAID, 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM

The TH58NYG4S0F is a single 1.8V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.

The device has two 4328-byte static registers which allow program and read data to be transferred betwee

TH58NYG4S0FBAID Features

* Organization x8 Memory cell array 4328 × 256K × 8 × 2 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.5K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Pag