TH58NYG3S0HBAI4 Datasheet (Toshiba) - 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

TH58NYG3S0HBAI4, 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

The TH58NYG3S0HBAI4 is a single 1.8V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  4096blocks.

The device has two 4352-byte static registers which allow program and read data to be transferred betwe

TH58NYG3S0HBAI4 Features

* Organization Memory cell array Register Page size Block size x8 4352  128K  8  2 4352  8 4352 bytes (256K  16K) bytes

* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

* Mode