CHA2266-99F
Description
The CHA2266-99F is a self biased, lownoise high gain driver amplifier. It is
VD 1
VD 2 designed mainly for VSAT applications in
Ku-band. The backside of the chip is both
RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured on a standard
Ga As p HEMT process, with via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form
Main Features
- Broadband performance 12.5- 17GHz
- 2.5d B noise figure
- 34d B gain, +/- 0.5d B gain flatness
- Low DC power consumption:130m A
- Saturated output power : 16d Bm
- Chip size 2.32 x 1.02 x 0.1mm
Gain & Return loss / d B
( Vds = 4V, Ids = 130m A )
MS11 MS21 MS22 NF
4,1 2,9 2,5 2,0 1,9 1,6 1,5 1,5 2,2
-5
-10
-15
-20 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Frequency / GHz
Main Characteristics
Tamb=+25°C
Symbol
Parameter
Min
Typ...
