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CHA2266-99F - Low-Noise Driver Amplifier

General Description

The CHA2266-99F is a self biased, lownoise high gain driver amplifier.

Ku-band.

RF and DC grounded.

Key Features

  • Broadband performance 12.5.
  • 17GHz.
  • 2.5dB noise figure.
  • 34dB gain, +/- 0.5dB gain flatness.
  • Low DC power consumption:130mA.
  • Saturated output power : 16dBm.
  • Chip size 2.32 x 1.02 x 0.1mm Gain & Return loss / dB ( Vds = 4V, Ids = 130mA ) 40 35 30 25 20 15 MS11 MS21 MS22 NF 10 5 4,1 2,9 2,5 2,0 1,9 1,6 1,5 1,5 2,2 0 -5 -10 -15 -20 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Frequency / GHz Main Characteristics Tamb=+25°C Symbol.

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Datasheet Details

Part number CHA2266-99F
Manufacturer United Monolithic Semiconductors
File Size 298.76 KB
Description Low-Noise Driver Amplifier
Datasheet download datasheet CHA2266-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA2266-99F 12.5-17GHz Low-Noise Driver Amplifier GaAs Monolithic Microwave IC Description The CHA2266-99F is a self biased, lownoise high gain driver amplifier. It is VD 1 VD 2 designed mainly for VSAT applications in Ku-band. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured on a standard IN OUT GaAs pHEMT process, with via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form Main Features  Broadband performance 12.5–17GHz  2.5dB noise figure  34dB gain, +/- 0.5dB gain flatness  Low DC power consumption:130mA  Saturated output power : 16dBm  Chip size 2.32 x 1.02 x 0.