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Si2307DS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–30
rDS(on) (W)
0.080 @ VGS = –10 V 0.140 @ VGS = –4.5 V
ID (A)
–3 –2
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2307DS (A7)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Power Dissipationa, b Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
–30 "20 –3 –2.5 –12 –1.25 1.25
Unit
V
A
W 0.8 –55 to 150 _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta t v 5 sec Steady State Notes a. Surface mounted on FR4 board. b.
SI2307DS Datasheet
