* 650V, 20A
* RDS(ON) = 0.19Ω (Max.) @ VGS = 10V, ID = 10A
* Very low FOM RDS(ON)XQg
* Extremely low switching loss
* Good stability and uniformity
A.
Silicon N-Channel MOSFET
Features
* 650V, 20A
* RDS(ON) = 0.19Ω (Max.) @ VGS = 10V, ID = 10A
* Very low FOM RDS(ON)XQg
* Extremely low switching loss
* Good stability and uniformity
Application
* Switch Mode Power Supply(SMP.
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