C4D20120D diode equivalent, 20a silicon carbide schottky diode.
* High-Frequency Operation
* Zero Reverse Recovery Current / Forward
Recovery Voltage
* Temperature-Independent Switching Behavior
* Parallel Devices With.
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Package Types: TO-247-3 Marking: C4D20120D
Features
* High-Frequency Operation
* Zero Reverse Recovery C.
With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diode.
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