PXAC241002FC - Thermally-Enhanced High Power RF LDMOS FET

Product Overview

Wolfspeed

Datasheet Details

Part number	PXAC241002FC
Manufacturer	Wolfspeed
File Size	263.17 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PXAC241002FC Datasheet
Additional preview pages of the PXAC241002FC datasheet.

Product details

Description

The PXAC241002FC is a 100-watt LDMOS FET with an asymmetric design, intended for use in multi-stantdard cellular power ampliﬁer applications in the 2300 to 2400 MHz frequency band.

Features

include dual-path design, input and output matching, high gain and a thermally-enhanced package with earless ﬂange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(main) = 230 mA, VGS(peak) = 1.5 V, ƒ = 2400 MHz 24 eqrpgjgofqq1h40gpdooBr53ggGPn'APRP,W3.C84DMMAHzsibgannadl,width 60 Peak/Average Ratio, Gain (dB) Efficiency (%) 20 Efficiency 40 16 20 Gain 12 0 8 PAR.

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Published: May 1, 2019 |