PBSM5240PF transistor equivalent, pnp transistor.
* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* Hig.
* Loadswitch
* Power management
* Power switches (e.g. motors, fans)
* Battery-driven devices
* Cha.
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
* Very low .
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