PBSM5240PF
Key Features
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain (hFE) at high IC
- High energy efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications
- Power management
- Power switches (e.g. motors, fans)
- Battery-driven devices
- Charging circuits 1.4 Quick reference data Table
- Quick reference data Symbol Parameter Conditions PNP low VCEsat (BISS) transistor VCEO collector-emitter voltage IC co
