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PBSM5240PF Datasheet PNP Transistor

Manufacturer: Nexperia

General Description

Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET.

The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package.

1.2

Overview

PBSM5240PF 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Rev.

2 — 20 April 2011 Product data sheet 1.

Product profile 1.

Key Features

  • Very low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High energy efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.