* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High energy efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications
* Load switch
* P
PBSM5240PFH Datasheet (1.38 MB)
PBSM5240PFH
1.38 MB
Pnp transistor.
PBSM5240PFH 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Rev. 1 20 June 2012 Product data sheet 1. Product pr.
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