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PBSM5240PFH PNP Transistor

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Description

PBSM5240PFH 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Rev.1 * 20 June 2012 Product data sheet 1.Product pr.
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (.

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Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High energy efficiency due to less heat generation

Applications

* Load switch
* Power management
* Power switches (e. g. motors, fans)
* Battery-driven devices
* Charging circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions PNP low VCEsat (BISS) transistor VCEO colle

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