* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than f
PBSM5240PF Datasheet (1.34 MB)
PBSM5240PF
1.34 MB
Pnp transistor.
PBSM5240PF 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Rev. 2 20 April 2011 Product data sheet 1. Product pr.
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