PBSM5240PF PNP Transistor

nexperia

PBSM5240PF Description

PBSM5240PF 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Rev.2 * 20 April 2011 Product data sheet 1.Product pr.
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET.

PBSM5240PF Features

* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High collector current gain (hFE) at high IC
* High energy efficiency due to less heat generation
* Smaller required Printed-Circuit Board (PCB) area than f

PBSM5240PF Applications

* Loadswitch
* Power management
* Power switches (e. g. motors, fans)
* Battery-driven devices
* Charging circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions PNP low VCEsat (BISS) transistor VCEO collector-emitter

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Datasheet Details

Part number: PBSM5240PF
Manufacturer: nexperia ↗
File Size: 1.34 MB
Datasheet: PBSM5240PF-nexperia.pdf
Description: PNP Transistor

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