PBSM5240PFH transistor equivalent, pnp transistor.
* Very low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High energy efficiency due to less heat generation
* Load switch
* Power management
* Power switches (e.g. motors, fans)
* Battery-driven devices
* Ch.
Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench Metal-Oxide Semiconductor Field- Effect Transistor (MOSFET). The device is housed in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device .
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