ADM28P10E - P-Channel MOSFET
ADV ADM28P10E P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -100V ID -28A RDS(ON) (mΩ) 76mΩ TO252 2 1 2 3 Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed ) Symbol Parameter Common Ratings VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDM 300μs Pulse Drain Current Tested⑴ ID Contin.