Datasheet Details
- Part number
- ADM2P06W
- Manufacturer
- ADV
- File Size
- 778.34 KB
- Datasheet
- ADM2P06W-ADV.pdf
- Description
- P-Channel MOSFET
ADM2P06W Description
ADV ADM2P06W P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS -60V ID -2.3A RDS(.
The ADM2P06W is the high cell density trenchedP-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and l.
ADM2P06W Features
* Excellent Cdv/dt effect decline
* Super Low Gate Charge
* 100% EAS Guaranteed
* Advanced Trench technology
ADM2P06W Applications
* The ADM2P06W meets the RoHS and Green Product requirement with full function reliability approved. Absolute Maximum Ratings ( TA = 25°C unless otherwise specifed )
Symbol
Parameter
Common Ratings
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG IS
St
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