AP1N40MI 400V N-Channel Enhancement Mode MOSFET

APM

Description

AP1N40MI 400V N-Channel Enhancement Mode MOSFET .
The AP1N40MI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve swit.

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Datasheet Specifications

Part number: AP1N40MI
Manufacturer: APM
File Size: 1.22 MB
Datasheet: AP1N40MI-APM.pdf
Description: 400V N-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. 2 AP1N40MI RVE1.0 Typical Characteristics AP1N40MI 400V N-Channel Enhancement Mode MOSFET Figure 1. Output Characteristics Figure 2. Body Diode Forward Voltage Figure3.DrainCurrentvs. Temperature Figure4.BVDSSVariationvs. Temperature 3 Figure

AP1N40MI Distributors

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AP1N40MI 400V N-Channel Enhancement Mode MOSFET APM

APM AP1N40MI-like datasheet