AP1N40MI Datasheet - APM

AP1N40MI 400V N-Channel Enhancement Mode MOSFET

The AP1N40MI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and highe.

AP1N40MI Features

* VDS = 400V ID =1A RDS(ON) < 8500mΩ @ VGS=10V （Type：7200mΩ） Application LED Package Marking and Ordering Information Product ID Pack AP1N40MI SOT23-3L Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter VDSS ID IDM VGS EAS PD TJ, Tstg RthJC RthJA Drain-Source Voltage (V

AP1N40MI-APM.pdf