AP1N50SI Datasheet - APM

AP1N50SI 500V N-Channel Enhancement Mode MOSFET

The AP1N50SI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and highe.

AP1N50SI Features

* VDS = 500V ID =1A RDS(ON) < 15Ω @ VGS=10V （Type：9Ω） Application LED Package Marking and Ordering Information Product ID Pack Marking AP1N50SI SOT89-3L AP1N50SI XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value VDSS Drain-Source Voltage (VGS = 0V) 5

AP1N50SI-APM.pdf