AP1N50SI 500V N-Channel Enhancement Mode MOSFET

APM

Description

AP1N50SI 500V N-Channel Enhancement Mode MOSFET .
The AP1N50SI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve swit.

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Datasheet Specifications

Part number: AP1N50SI
Manufacturer: APM
File Size: 858.76 KB
Datasheet: AP1N50SI-APM.pdf
Description: 500V N-Channel Enhancement Mode MOSFET

Applications

* , should be limited by total power dissipation. 2 AP1N50SI REV1.0 Typical Characteristics AP1N50SI 500V N-Channel Enhancement Mode MOSFET Figure1:Typical Output Characteristics（Tc=25℃） Figure2:On-Resistance Vs. Temperature Figure3: Source-Drain Diode Forward Voltage Figure4: Maximum Drain C

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AP1N50SI 500V N-Channel Enhancement Mode MOSFET APM

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